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        1. 產品與服務
          SiC

          碳化硅肖特基二極管(SiC Schottky Barrier Diode,SiC SBD)

           

          型 號 IF(AV) VRRM VRSM VDC QC IFSM IFRM Ptot TJ VF IR C 封裝形式
          @TJ
          =25℃
          @TJ=25℃ @TJ=25℃ @TJ=25℃,f=1MHz
          Pulse:tp
          =10µs
          @IF(AV) @VRRM @VR
          =0V
          @VR
          =400V
          @VR
          =800V
          @VR
          =1000V
          A V V V nC A A W V μA PF PF PF PF
          tPower-
          SS01•
          JB0BA6E
          20 650 650 650 82.5 -55~+175 2.3 26.3 1900.0 120.0 88.6 TO-247-2L
          tPower-
          SS01•
          JB0XX6E
          20 650 650 650 -55~+175 1.7 26.3
          tPower-
          SS01•
          JC0BA12
          30 1200 1200 1200 180.0 -55~+175 1.37 25 TO-247-2L
          tPower-
          SS01•
          JB5BA17
          25 1700 1700 1700 203 -55~+175 1.39 76.1 3190.0 151.0 139.0 TO-247-2L
          tPower-
          SS01•
          JB5XX17
          25 1700 1700 1700 -55~+175 1.43 76.1
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